Beyond Coherent Oxide Heterostructures: Atomic‐Scale Structure of Misfit Dislocations
نویسندگان
چکیده
منابع مشابه
Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication
In this paper, the regularities of dislocation pattern formation in single layer heterostructures with low lattice mismatch (f < 1%) are reviewed. The main attention is focused on the recently suggested mechanisms of dislocation nucleation and multiplication. An evolution of dislocation pattern from regular flat misfit dislocation network to the dense three-dimensional one was found to proceed ...
متن کاملMassive Interfacial Reconstruction at Misfit Dislocations in Metal/Oxide Interfaces
Electronic structure calculations were performed to study the role of misfit dislocations on the structure and chemistry of a metal/oxide interface. We found that a chemical imbalance exists at the misfit dislocation which leads to dramatic changes in the point defect content at the interface - stabilizing the structure requires removing as much as 50% of the metal atoms and insertion of a larg...
متن کاملConfigurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5PÕGaAs heterostructures
A configuration of misfit dislocation dipoles is observed in a Ga0.5In0.5P heterostructure grown by solid-source molecular-beam epitaxy on GaAs. The dipole dislocations are mostly of 60° type, separated by ;3.5 nm. The dislocations are not produced by conventional lattice mismatch, rather, they could be the result of lateral compositional modulation in the Ga0.5In0.5P epilayer. © 2000 American ...
متن کاملFormation of misfit dislocations in strained-layer GaAsÕInxGa1ÀxAsÕGaAs heterostructures during postfabrication thermal processing
It is demonstrated that relaxation of GaAs/InxGa12xAs/GaAs strained-layer heterostructures can be brought about by postfabrication thermal processing. Misfit dislocations are introduced into the structure during thermal processing, even though the thickness of the strained layer is well below the critical value predicted by the Matthews–Blakeslee model. The misfit dislocations are observed to b...
متن کاملAnisotropic strain relaxation and surface morphology related to asymmetry in the formation of misfit dislocations in InGaAs/GaAs heterostructures
Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch (less than 1%), grown by metalorganic vapour-phase epitaxy have been studied by the transmission electron microscopy, atomic force microscopy as well as X-ray diffractometry. A regular network of 60° misfit dislocations formed at the (001) interface in two orthogonal 〈110〉 crystallographic directions has been revealed....
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Theory and Simulations
سال: 2019
ISSN: 2513-0390,2513-0390
DOI: 10.1002/adts.201900078